Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains

TL;DR

This paper investigates how weak light affects tunneling transport in heavily doped GaAs/AlAs superlattices, revealing a strong photoresponse linked to electric domain formation and carrier depletion.

Contribution

It uncovers the impact of weak interband illumination on electric domain behavior and tunneling transport in doped superlattices, a novel insight into their photoelectronic properties.

Findings

Photoresponse appears only after electric domain formation.

Illumination causes transformations in domain modes.

Carrier depletion occurs inside high-field domains.

Abstract

The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.