An atomic frequency comb memory in rare-earth doped thin-film lithium niobate

TL;DR

This paper demonstrates a compact, chip-integrated atomic frequency comb memory in rare-earth doped thin-film lithium niobate, enabling scalable quantum photonic systems with broad bandwidth and reduced power requirements.

Contribution

The work introduces a novel, chip-scale atomic frequency comb memory in thin-film lithium niobate, combining broad bandwidth, long storage time, and high optical confinement for scalable quantum applications.

Findings

Broad storage bandwidth exceeding 100 MHz

Optical storage time over 250 ns

Three orders of magnitude reduction in optical power

Abstract

Atomic frequency combs memories that coherently store optical signals are a key building block for optical quantum computers and quantum networks. Integrating such memories into compact and chip-scale devices is essential for scalable quantum technology, but to date most demonstrations have been in bulk materials or waveguides with large cross-sections, or using fabrication techniques not easily adaptable to wafer scale processing. We demonstrate compact chip-integrated atomic frequency comb storage in rare earth doped thin-film lithium niobate. Our optical memory exhibits a broad storage bandwidth exceeding 100 MHz, and optical storage time of over 250 ns. The enhanced optical confinement in this device structure enables three orders of magnitude reduction in optical power as compared to large ion-diffused waveguides for the same Rabi frequency. These compact atomic frequency comb memories pave the way towards scalable, highly efficient, electro-optically tunable quantum photonic systems that can store and manipulate light on a compact chip.