Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
Sedighe Salimian, Matteo Carrega, Isha Verma, Valentina Zannier,, Michal P. Nowak, Fabio Beltram, Lucia Sorba, and Stefan Heun

TL;DR
This paper demonstrates gate-controlled supercurrent in ballistic InSb nanoflag Josephson junctions, highlighting their potential for quantum technologies due to high interface transparency and phase-coherent transport.
Contribution
The authors fabricated and characterized ballistic InSb nanoflag Josephson junctions with Ti/Nb contacts, revealing gate-tunable supercurrent and phase coherence.
Findings
Gate-tunable supercurrent up to 50 nA at 250 mK
Observation of subharmonic gap structures indicating phase coherence
High interface transparency in InSb nanoflag junctions
Abstract
High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, high-quality heteroepitaxial two-dimensional (2D) InSb layers are very diffcult to realize owing to the large lattice mismatch with all commonly available semiconductor substrates. An alternative pathway is the growth of free-standing single-crystalline 2D InSb nanostructures, the so-called nanoflags. Here we demonstrate…
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