Stochastic behaviour of an interface-based memristive device

TL;DR

This paper introduces a simple, efficient 1D model for interface-based memristive devices that captures their stochastic switching behavior and aligns well with experimental data, facilitating circuit integration.

Contribution

It presents a novel computationally inexpensive 1D model that incorporates stochastic behavior of memristive devices, improving simulation efficiency and accuracy.

Findings

Model accurately reproduces experimental I-V characteristics.

Incorporates stochastic behavior observed in real devices.

Efficiently suitable for circuit simulation frameworks.

Abstract

A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behaviour of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behaviour observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behaviour, is modelled using the kinetic Cloud-In-a-Cell scheme. The calculated current-voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings.