Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

TL;DR

This study demonstrates electron spin resonance in a graphene-MoS2 heterostructure, revealing proximity-induced spin-orbit coupling through g-factor shifts, advancing understanding of spin manipulation in 2D materials.

Contribution

First experimental observation of electron spin resonance in a graphene-MoS2 heterostructure showing proximity-induced spin-orbit coupling effects.

Findings

Measured g-factor of 1.91 indicating SOC

Proximity effects cause significant g-factor shift

Resonance observed at 18-33 GHz frequency range

Abstract

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.