High-responsivity, High-detectivity Photomultiplication Organic Photodetector Realized by a Metal-Insulator-Semiconductor Tunneling Junction
Linlin Shi, Ning Li, Ting Ji, Ye Zhang, Wenyan Wang, Lin Feng, Rong, Wen, Yuying Hao, Kaiying Wang, Furong Zhu, Guohui Li, Beng S. Ong, and Yanxia, Cui

TL;DR
This paper reports a high-responsivity, high-detectivity organic photodetector with suppressed dark current achieved by introducing an atomically thin Al2O3 layer, enabling advanced imaging applications.
Contribution
The study demonstrates a novel PM-OPD design with an Al2O3 interfacial layer that significantly improves responsivity and detectivity while reducing dark current.
Findings
Achieved a responsivity of 8294 A/W and detectivity of 6.76×10^14 Jones.
Suppressed dark current due to the Al2O3 layer.
Demonstrated a 26×26 pixel image sensor responsive to UV and visible light.
Abstract
Organic photodetectors (OPDs) possess bright prospects in applications of medical imaging and wearable electronics due to the advantages such as low cost, good biocompatibility, and good flexibility. Photomultiplication OPDs (PM-OPDs) enabled by the trap-assisted carrier tunneling injection effect exhibit external quantum efficiencies far greater than unity, thus the acquired responsivities are extremely high. However, the reported PM-OPDs with high responsivity performances are all accompanied by high dark currents due to the introduction of carrier traps, which inevitably results in inferior detectivities. In this work, we modify a P3HT:PCBM donor-rich PM-OPD by introducing an atomically thin Al2O3 interfacial layer through the ALD technique, obtaining a high responsivity of 8294 A/W and high detectivity of 6.76*10^14 Jones, simultaneously, both of which are among the highest reported…
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Taxonomy
TopicsAnalytical Chemistry and Sensors · Luminescence and Fluorescent Materials · Conducting polymers and applications
