Theory of Non-equilibrium "Hot" Carriers in Direct Band-gap Semiconductors Under Continuous Illumination
Subhajit Sarkar, Ieng-Wai Un, Yonatan Sivan, Yonatan Dubi

TL;DR
This paper develops a comprehensive self-consistent theoretical framework to predict non-equilibrium hot carrier distributions in illuminated semiconductors, revealing counter-intuitive behaviors and improving the understanding of hot-carrier effects in optoelectronic applications.
Contribution
It introduces the first unified theory accounting for excitation, thermalization, and recombination, enabling accurate predictions of non-equilibrium carrier distributions under continuous illumination.
Findings
Distributions deviate more from equilibrium at low illumination intensities.
Different experimental methods yield varying carrier temperature dependencies.
The model accurately predicts photoluminescence efficiency, matching experimental data.
Abstract
The interplay between the illuminated excitation of carriers and subsequent thermalization and recombination leads to the formation of non-equilibrium distributions for the "hot" carriers and to heating of both electrons, holes and phonons. In spite of the fundamental and practical importance of these processes, there is no theoretical framework which encompasses all of them and provides a clear prediction for the non-equilibrium carrier distributions. Here, a self-consistent theory accounting for the interplay between excitation, thermalization, and recombination in continuously-illuminated semiconductors is presented, enabling the calculation of non-equilibrium carrier distributions. We show that counter-intuitively, distributions deviate more from equilibrium under weak illumination than at high intensities. We mimic two experimental procedures to extract the carrier temperatures and…
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