Flat-band plasmons in twisted bilayer transition metal dichalcogenides
Xueheng Kuang, Zhen Zhan, Shengjun Yuan

TL;DR
This study investigates flat-band plasmons in twisted bilayer MoS2, revealing how lattice relaxations and doping influence plasmon dispersion, with implications for plasmon-mediated superconductivity.
Contribution
It provides a comprehensive analysis of flat-band plasmons considering lattice relaxation and doping effects in twisted bilayer MoS2, highlighting conditions for low-damped plasmon modes.
Findings
Flat-band plasmons are tunable by twist angle and doping.
Lattice relaxations prevent the flat band from isolating, affecting plasmon behavior.
Interband transitions significantly modify plasmon dispersion.
Abstract
Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate flat-band plasmons in the hole-doped twisted bilayer MoS (tb-MoS) by employing a full tight-binding model and the random phase approximation. When considering lattice relaxations in tb-MoS, the flat band is not separated from remote valence bands, which makes the contribution of interband transitions in transforming the plasmon dispersion and energy significantly different. In particular, low-damped and quasi-flat plasmons emerge if we only consider intraband transitions in the doped flat band, whereas a plasmon dispersion emerges if we also take into account interband transitions between the flat band and remote bands. Furthermore, the plasmon energies are tunable with twist angles and doping levels. However, in a rigid sample that…
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