Dissipation and gate timing errors in SWAP operations of qubits
Nathan L. Foulk, Robert E. Throckmorton, S. Das Sarma

TL;DR
This paper investigates how dissipation and timing errors impact the fidelity of SWAP gates in qubit chains, highlighting that dissipation has minimal effect compared to interqubit interaction noise and that timing errors influence optimal coupling strength.
Contribution
It introduces a model for dissipation in multivalley semiconductor spin qubits and analyzes its effect on SWAP gate fidelity, comparing it to interqubit noise and timing errors.
Findings
Dissipation has little effect on fidelity in current Si qubit circuits.
Gate timing errors create an optimal exchange coupling for SWAP gates.
Interqubit interaction noise has a more significant impact on fidelity than dissipation.
Abstract
We examine how dissipation and gate timing errors affect the fidelity of a sequence of SWAP gates on a chain of interacting qubits in comparison to noise in the interqubit interaction. Although interqubit interaction noise and gate timing errors are always present in any qubit platform, dissipation is a special case that can arise in multivalley semiconductor spin qubit systems, such as Si-based qubits, where dissipation may be used as a general model for valley leakage. In our Hamiltonian, each qubit is coupled via Heisenberg exchange to every other qubit in the chain, with the strength of the exchange interaction decreasing exponentially with distance between the qubits. Dissipation is modeled through the term in the Hamiltonian, and is chosen so as to be consistent with the experimentally observed intervalley tunneling in Si. We show that randomness in…
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