Berry Phase origin of the planar spin Hall effect
Haolin Pan, Dazhi Hou, Yang Gao

TL;DR
This paper explains the Berry phase origin of the planar spin Hall effect, identifying conditions for intrinsic effects and guiding material discovery through a new spin-repulsion vector concept.
Contribution
It introduces a spin-repulsion vector that determines the intrinsic planar spin Hall effect and identifies 13 crystal groups where it can occur, aiding material search.
Findings
Finite spin-repulsion vector exists in 13 crystal point groups
Provides criteria for identifying intrinsic planar spin Hall materials
Facilitates quantitative calculations and experimental exploration
Abstract
The Berry phase origin is elaborated for the recent-discovered planar spin Hall effect which features current-induced spin polarization within the plane of the Hall deflection. We unravel a spin-repulsion vector governing the planar spin Hall effect, providing a transparent criteria for identifying intrinsic planar spin Hall materials. Finite spin-repulsion vector is found permitted in 13 crystalline point groups, revealing a big number of unexplored planar spin Hall systems. Our result can be used for the quantitative calculation of the planar spin Hall effect, facilitating further material hunting and experimental investigation.
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Taxonomy
TopicsMagnetic properties of thin films · Quantum and electron transport phenomena · Topological Materials and Phenomena
