Altering the magnetic ordering of Fe$_{3}$Ga$_{4}$ via thermal annealing and hydrostatic pressure

TL;DR

This study demonstrates how thermal annealing and hydrostatic pressure can tune the magnetic transition temperatures of Fe$_{3}$Ga$_{4}$ by altering its crystallographic properties, enabling potential device applications.

Contribution

It reveals the relationship between structural modifications and magnetic phase transitions in Fe$_{3}$Ga$_{4}$, showing how to control transition temperatures through annealing and pressure.

Findings

Transition temperature can be tuned down to 300 K.

External pressure linearly adjusts magnetic transition temperatures.

Fe$_{3}$Ga$_{4}$ remains multi-phase after annealing.

Abstract

The effects of post-synthesis annealing temperature on arc-melted samples of Fe$_{3}$Ga$_{4}$ has been studied to investigate changes in crystallographic and magnetic properties induced by annealing. Results show a significant trend in the evolution of the (incommensurate spin density wave) ISDW-FM (ferromagnetic) transition temperature as a function of the refined unit cell volume in annealed samples. Strikingly, this trend allowed for the tuning of the transition temperature down to room-temperature (300 K) whilst maintaining a sharp transition in temperature, opening the door to the use of Fe$_{3}$Ga$_{4}$ in functional devices. Crystallographic analysis through Rietveld refinement of high-resolution x-ray diffraction data has showed that arc-melted stoichiometric Fe$_{3}$Ga$_{4}$ is multi-phase regardless of annealing temperature with a minor phase of FeGa$_{3}$ decreasing in phase fraction at higher annealing temperature. In order to validate the trend in ISDW-FM transition temperature with regard to unit cell volume, high pressure magnetometry was performed. This showed that the FM-ISDW ($\sim$ 68 K) and ISDW-FM ($\sim$ 360 K) transition temperatures could be tuned, increased and decreased respectively, linearly with external pressure. Thus, external pressure and the ensuing crystallographic changes minimize the temperature range of the stability of the ISDW pointing toward the importance of structural properties on the mechanism for the formation of the intermediate ISDW phase. These results show how this model system can be tuned as well as highlighting the need for future high-pressure crystallography and related single crystal measurements to understand the mechanism and nature of the intermediate ISDW phase to be exploited in future devices.