Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes

TL;DR

This paper investigates how ballistic electron injection causes plasma instability in graphene-based transistors and diodes, leading to terahertz radiation generation, with implications for device optimization.

Contribution

It introduces a novel analysis of ballistic electron-induced plasma instability in graphene devices, advancing understanding for terahertz emitter development.

Findings

Ballistic electron injection induces plasma instability in graphene devices.

Plasma instability can generate terahertz radiation.

Results aid in optimizing graphene-based terahertz emitters.

Abstract

We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.