Selective crystal growth of indium selenide compounds from saturated solutions grown in a selenium vapor

TL;DR

This paper introduces a novel crystal growth method for indium selenide compounds using selenium vapor, enabling selective and stoichiometric crystal fabrication without complex chemical ratio control.

Contribution

The study presents a new vapor-assisted solution growth technique for indium selenide, allowing precise control over stoichiometry and phase selection during crystal growth.

Findings

Successfully grew InSe and In2Se3 crystals using the method.

Identified growth windows for each indium selenide compound.

Demonstrated control over stoichiometry via vapor pressure and temperature.

Abstract

Indium selenide compounds are promising materials for energy conversion, spintronic applications, and chemical sensing. However, it is difficult to grow stoichiometric indium selenide crystals due to the high equilibrium selenium vapor pressure and the complicated phase equilibrium system of indium selenide compounds. In this paper, we apply a novel and convenient crystal growth method, in which the saturated solution is grown by the application of a selenium vapor. In this method, selenium vapor at a pressure higher than the saturated vapor pressure is applied to molten indium, such that the selenium continuously dissolves into the indium solution until the solubility at the growth temperature is reached; then a slow cooling process results in crystallization. The selenium dose is matched to its solubility so that indium selenide compounds can be selectively grown just by controlling the temperature without the need to consider the chemical ratio in the solution. The pressure of the vapor is controlled during the whole growth process so that any deviation from a stoichiometric composition in the crystal can be controlled. Both InSe and In2Se3 were successfully grown using this method, and we have investigated the growth mechanism and found the growth window for each compound. This study presents a novel and convenient approach to fabricating transitional metal chalcogenides without deficiencies in the chalcogen element.