Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

TL;DR

This study explores Te doping in InAs nanowires to enhance their suitability for superconducting hybrid devices, demonstrating controlled doping and improved device performance.

Contribution

It provides detailed analysis of Te atom incorporation in InAs nanowires and shows how doping modifies their transport properties for quantum applications.

Findings

Te atoms mainly accumulate in the nanowire core and corners

Doping increases the critical current in Josephson junctions

Transport properties are effectively tuned by Te doping

Abstract

Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. The efficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, a Josephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed a clear increase of the critical current with increase of the dopant concentration.