Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO$_{x}$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

TL;DR

This study investigates the low-frequency 1/f voltage noise in AlO$_{x}$ resistive memory devices with magneto-resistive effects, revealing charge dynamics and electron trapping mechanisms during resistance switching.

Contribution

It provides new insights into charge transport mechanisms by analyzing 1/f noise and Hooge's parameter variations across resistance states in AlO$_{x}$ memory devices.

Findings

1/f$^{γ}$ noise observed across voltage biases

Hooge's parameter and exponent vary with resistance state

Electron trapping and oxygen vacancy migration influence charge dynamics

Abstract

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge's empirical relation, we found that the Hooge's parameter $\alpha$ and the exponent $\gamma$ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlO$_x$ barrier, plays an essential role in the charge transport dynamics of AlO$_x$-based RS memory devices.