Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions
Ra\'ul Guerrero-Avil\'es, Marta Pelc, Fabian Geisenhof, Thomas Weitz, and Andr\'es Ayuela

TL;DR
This study investigates the relative stability of Bernal and rhombohedral stackings in trilayer graphene, revealing how distortions and deformations influence stacking preferences, which is crucial for controlling electronic properties.
Contribution
The paper provides a detailed analysis of how various distortions affect the stability of different trilayer graphene stackings, offering insights for experimental control of stacking configurations.
Findings
Both Bernal and rhombohedral stackings have similar energies.
Deformations like shear can induce switching between stackings.
Symmetry breaking influences stacking stability.
Abstract
Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states expected to exhibit spontaneous quantum Hall effect, surface superconductivity, and even topological order. However, the difficulty in exploring rhombohedral graphenes is that in experiments, the alternative, hexagonal stacking is the most commonly found geometry and has been considered the most stable configuration for many years. Here we reexamine this stability issue in line with current ongoing studies in various laboratories. We conducted a detailed investigation of the relative stability of trilayer…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
