High-mobility field-effect transistor using 2-dimensional electron gas at the LaScO3/BaSnO3 interface

TL;DR

This paper reports the discovery of a high-mobility 2D electron gas at the LaScO3/BaSnO3 interface, enabling the creation of a perovskite oxide-based transistor with significant mobility.

Contribution

It introduces a novel high-mobility 2DEG system at the LaScO3/BaSnO3 interface and demonstrates a functional transistor using this interface.

Findings

High 2DEG density at LaScO3/BaSnO3 interface

Field-effect mobility close to 100 cm2 V-1 s-1

Consistent polarization model explains 2DEG behavior

Abstract

A novel 2-dimensional electron gas (2DEG) system with high-mobility was discovered at the interface of two perovskite oxides, a polar orthorhombic perovskite LaScO3 (LSO) and a nonpolar cubic perovskite BaSnO3 (BSO). Upon depositing the LSO film on the BSO film, the conductance enhancement and the resulting 2DEG density (n2D) was measured. Comparing the results with the previously reported LaInO3/BaSnO3 (LIO/BSO) polar interface, we applied the interface polarization model to the LSO/BSO system, in which the polarization exists only over 4 pseudocubic unit cells in LSO from the interface and vanishes afterward like the LIO/BSO interface. Based on the calculations of the self-consistent Poisson-Schrodinger equations, the LSO thickness dependence of n2D of LSO/BSO heterointerface is consistent with this model. Furthermore, a single subband in the quantum well is predicted. Using the conductive interface and the LSO as a gate dielectric, a 2DEG transistor composed of only perovskite oxides with high field-effect mobility (uFE) close to 100 cm2 V-1 s-1 is demonstrated.