Room-temperature quantum spin Hall edge state in a higher-order topological insulator Bi$_4$Br$_4$
Nana Shumiya, Md Shafayat Hossain, Jia-Xin Yin, Zhiwei Wang, Maksim, Litskevich, Chiho Yoon, Yongkai Li, Ying Yang, Yu-Xiao Jiang, Guangming, Cheng, Yen-Chuan Lin, Qi Zhang, Zi-Jia Cheng, Tyler A. Cochran, Daniel, Multer, Xian P. Yang, Brian Casas, Tay-Rong Chang, Titus Neupert

TL;DR
This study visualizes a quantum spin Hall edge state in Bi4Br4, a higher-order topological insulator, demonstrating its stability at room temperature and advancing the pursuit of macroscopic quantum phenomena.
Contribution
It provides the first direct visualization of a room-temperature quantum spin Hall edge state in a higher-order topological insulator Bi4Br4.
Findings
Large insulating gap of over 200meV observed
Gapless edge state persists up to 300K
Edge state is protected by time-reversal symmetry
Abstract
Room-temperature realization of macroscopic quantum phenomena is one of the major pursuits in fundamental physics. The quantum spin Hall state, a topological quantum phenomenon that features a two-dimensional insulating bulk and a helical edge state, has not yet been realized at room temperature. Here, we use scanning tunneling microscopy to visualize a quantum spin Hall edge state on the surface of the higher-order topological insulator Bi4Br4. We find that the atomically resolved lattice exhibits a large insulating gap of over 200meV, and an atomically sharp monolayer step edge hosts a striking in-gap gapless state, suggesting the topological bulk-boundary correspondence. An external magnetic field can gap the edge state, consistent with the time-reversal symmetry protection inherent to the underlying topology. We further identify the geometrical hybridization of such edge states,…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Diamond and Carbon-based Materials Research
