Electronic cloaking of confined states in phosphorene junctions

TL;DR

This paper investigates electronic cloaking phenomena in phosphorene junctions, revealing direction-dependent confined states that affect transport properties and can be modulated by external fields, with potential for experimental detection.

Contribution

It introduces the concept of electronic cloaking in phosphorene junctions and demonstrates its dependence on direction, bandgap, and magnetic field, advancing understanding of anisotropic 2D material transport.

Findings

Confined states cause Fabry-Pérot resonances in armchair junctions.

Zigzag junctions exhibit invisibility at normal incidence, leading to null transmission.

Electronic cloaking affects conductance and Seebeck coefficient, and can be modulated externally.

Abstract

We study the electronic transport of armchair and zigzag gated phosphorene junctions. We find confined states for both direction-dependent phosphorene junctions. In the case of armchair junctions confined states are reflected in the transmission properties as Fabry-P\'erot resonances at normal and oblique incidence. In the case of zigzag junctions confined states are invisible at normal incidence, resulting in a null transmission. At oblique incidence Fabry-P\'erot resonances are presented in the transmission as in the case of armchair junctions. This invisibility or electronic cloaking is related to the highly direction-dependent pseudospin texture of the charge carriers in phosphorene. Electronic cloaking is also manifested as a series of singular peaks in the conductance and as inverted peaks in the Seebeck coefficient. The characteristics of electronic cloaking are also susceptible to the modulation of the phosphorene bandgap and an external magnetic field. So, electronic cloaking in phosphorene junctions in principle could be tested through transport, thermoelectric or magnetotransport measurements.