Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons
Anand Katailiha, Ravindra G. Bhardwaj, Paul C. Lou, Ward P. Beyermann,, and Sandeep Kumar

TL;DR
This paper demonstrates topological phonons in strained silicon, showing long-distance spin transport and unidirectional magnetoresistance, advancing the understanding of topological and spin phononics in inhomogeneous media.
Contribution
It provides experimental evidence of topological phonon effects, including spin transport and magnetoresistance, in inhomogeneously strained silicon films, a novel application of topological phononics.
Findings
Long-distance (100 μm) spin transport via topological phonons
Unidirectional magnetoresistance of phonons at room temperature
Manifestation of topological Nernst effect in silicon films
Abstract
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum space due to inhomogeneity. The inhomogeneous (or gradient) medium can be created using an applied strain gradient in a semiconductor thin film (silicon) since the phonon frequency and dispersion will be a function of the local strain along the strain gradient direction. As a consequence, topological phonon mediated spin and heat transport can be engineered in the semiconductor thin films. Here, we present evidence of a long-distance (100 um) spin transport in the freestanding Si thin film sample under an applied strain gradient using transverse spin-Nernst effect measurement. The long-distance spin transport was attributed to the topological spin-Hall effect of phonons in an inhomogeneous medium. The…
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Taxonomy
TopicsChemical and Physical Properties of Materials · Metallurgical and Alloy Processes · Advanced Physical and Chemical Molecular Interactions
