Spin-valley-coupled quantum spin Hall insulator with topological Rashba-splitting edge states in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$

TL;DR

This paper predicts a novel Janus monolayer material that exhibits coupled spin-valley quantum spin Hall effects with topologically protected edge states, promising for spintronics and valleytronics applications at room temperature.

Contribution

It introduces a new Janus monolayer $ ext{CSb}_{1.5} ext{Bi}_{1.5}$ with spin-valley coupling, Rashba-splitting edge states, and robustness under strain, advancing topological material design.

Findings

Predicted spin-valley-coupled quantum spin Hall insulator in $ ext{CSb}_{1.5} ext{Bi}_{1.5}$

Large energy gap and spin-splitting > 25 meV at room temperature

Rashba-splitting edge states and robustness under biaxial strain

Abstract

Achieving combination of spin and valley polarized states with topological insulating phase is pregnant to promote the fantastic integration of topological physics, spintronics and valleytronics. In this work, a spin-valley-coupled quantum spin Hall insulator (svc-QSHI) is predicted in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ with dynamic, mechanical and thermal stabilities. The inequivalent valleys have opposite Berry curvature and spin moment, which can produce a spin-valley Hall effect. In the center of Brillouin zone, a Rashba-type spin splitting can be observed due to missing horizontal mirror symmetry. Moreover, monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ shows unique Rashba-splitting edge states. Both energy band gap and spin-splitting at the valley point are larger than the thermal energy of room temperature (25 meV) with generalized gradient approximation (GGA) level, which is very important at room temperature for device applications. It is proved that the spin-valley-coupling and nontrivial quantum spin Hall (QSH) state are robust again biaxial strain. Our work may provide a new platform to achieve integration of topological physics, spintronics and valleytronics.