Hidden electronic order in 1T-VSe2

TL;DR

This study reveals a dispersion-less electronic state in 1T-VSe2 and its evolution with electron doping, providing insights into the complex surface electronic structure of transition metal dichalcogenides.

Contribution

The paper uncovers a previously unobserved dispersion-less electronic emission in 1T-VSe2 and details its behavior under electron doping, advancing understanding of surface states in transition metal dichalcogenides.

Findings

Discovery of a dispersion-less emission near the Fermi level.

Observation of band splitting upon electron doping.

Intrinsic nature of the dispersion-less emission suggested.

Abstract

Here, we study the surface electronic structure of 1T-VSe2 by means of angle resolved photoemission spectroscopy and uncover a dispersion-less emission located in the vicinity of the Fermi level. Its crystal momentum dependency reveals that it occupies large portions of the Brillouin zone (BZ), where no bulk band is expected. Upon electron doping (deposition of Rb-atoms), the system evolves in a surprising way. Besides the expected down-shifting of the bands, a splitting of both bulk and the dispersion-less emission is observed. This peculiar behaviour strongly suggests the intrinsic nature of this emission. Its characterization may therefore be relevant to a deeper understanding of the physics of transition metal dichalcogenides.