Engineering and probing atomic quantum defects in 2D semiconductors: A perspective

TL;DR

This paper reviews recent advances in engineering and probing atomic defects in 2D TMD semiconductors, highlighting their potential for quantum technologies and discussing future research directions.

Contribution

It provides a comprehensive overview of defect engineering techniques and insights into their quantum properties in 2D TMDs, offering a personal perspective on future challenges.

Findings

Demonstrated methods for creating atomic defects in 2D TMDs

Probed quantum properties of engineered defects

Outlined future research directions in defect control

Abstract

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities towards realizing these goals are the mitigation of accidental lattice imperfections and the deterministic generation of desirable defects. In this perspective, the authors review some of their recent results on engineering and probing atomic point defects in 2D TMDs. Furthermore we provide a personal outlook on the next frontiers in this fast evolving field.