Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

TL;DR

This paper demonstrates universal non-volatile resistive switching in various 2D metal dichalcogenides, revealing a unique conductive-point RAM effect that enables fast, low-voltage, high-contrast memory switching without forming processes.

Contribution

It introduces the universal NVRS behavior across multiple 2D metal dichalcogenides and explains the switching mechanism via the novel CPRAM effect.

Findings

Low switching voltage in 2D materials

Large on/off resistance ratio achieved

Fast switching speeds observed

Abstract

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.