Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers

TL;DR

This study investigates how the stacking order in NiFe-IrO2 bilayers affects spin-orbit torque, magnetoresistance, and magnetic anisotropy, revealing significant differences based on layer arrangement that impact spintronic device design.

Contribution

It demonstrates the crucial influence of stacking order on spin transport and magnetic properties in IrO2/ferromagnet bilayers, a novel insight for spintronic applications.

Findings

Stacking order significantly alters SOT magnitude and sign.

IrO2 bottom layer enhances magnetic anisotropy and Hall effect.

Stack order impacts spin and magnetotransport properties in bilayers.

Abstract

The 5d transition-metal oxides have been an intriguing platform to demonstrate efficient charge to spin current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer Ni$_{81}$Fe$_{19}$-5d iridium oxide, IrO$_2$. While all the IrO$_2$ and Pt control samples exhibit large dampinglike-SOT generation stemming from the efficient charge to spin current conversion, the magnitude of the SOT is larger in the IrO$_2$ (Pt)-bottom sample than in the IrO$_2$ (Pt)-top one. The fieldlike-SOT has even more significant stack order effect, resulting in an opposite sign in the IrO$_2$ samples in contrast to the same sign in the Pt samples. Furthermore, we observe that the magnetic anisotropy energy density and the anomalous Hall effect are increased in the IrO$_2$ (Pt)-bottom sample, suggesting enhanced interfacial perpendicular magnetic anisotropy. Our findings highlight the significant influence of the stack order on spin transport and magnetotransport properties of Ir oxide/ferromagnet systems, providing useful information on design of SOT devices including 5d transition-metal oxides.