Fast barrier-free switching in synthetic antiferromagnets

TL;DR

This paper analytically demonstrates barrier-free, ultra-fast magnetic switching in synthetic antiferromagnets using short, low-power magnetic pulses, promising energy-efficient memory applications.

Contribution

It provides an analytical solution for magnetization dynamics in SAFs and introduces a new barrier-free switching regime with potential for low-power memory devices.

Findings

Barrier-free switching achieved with short magnetic pulses

Estimated power per write operation is around 100 pJ

Switching is significantly faster and more energy-efficient than conventional methods

Abstract

We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be $ \sim 100 $ pJ, 10-100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.