Dual-channel charge transfer doping of graphene by sulfuric acid

TL;DR

This study uncovers two distinct charge transfer mechanisms in graphene when doped with sulfuric acid, depending on acid concentration, enhancing understanding of chemical interactions in 2D materials.

Contribution

It identifies and verifies two charge transfer channels in sulfuric acid doping of graphene, clarifying the mechanisms involved at different acid concentrations.

Findings

Charge transfer occurs via two channels depending on acid concentration.

Oxygen reduction is involved at lower acid concentrations (<6 M).

Higher concentrations (>6 M) involve additional reduction processes without oxygen.

Abstract

Two-dimensional materials represented by graphene and transition metal dichalcogenides undergo charge transfer (CT) processes and become hole-doped in strong mineral acids. Nonetheless, their mechanisms remain unclear or controversial. This work proposes and verifies two distinctive CT channels in sulfuric acids, respectively driven by oxygen reduction reaction involving O2/H2O redox couples and reduction of bisulfate or related species. Acid-induced changes in the charge density of graphene were in-situ quantified as a function of oxygen content using Raman spectroscopy. At acid concentrations lower than 6 M, the former channel is operative, requiring dissolved O2. Above 6 M, the degree of CT was even higher because the former is cooperated with by the latter channel, which does not need dissolved oxygen. The mechanism revealed in this study will advance our fundamental understanding of how low-dimensional materials interact with chemical environments.