Hot Electron Dynamics in Zincblende and Wurtzite GaN

TL;DR

This paper presents a theoretical study of how excess energy dissipates in highly excited electrons in two GaN crystal structures, revealing faster dissipation in wurtzite within subpicosecond timescales.

Contribution

It introduces a detailed quantum transport model to compare electron energy dissipation in wurtzite and zincblende GaN structures.

Findings

Energy dissipation is faster in wurtzite GaN.

Dissipation occurs within less than 0.2 picoseconds.

Theoretical modeling of nonequilibrium carrier and phonon temperatures.

Abstract

A theoretical investigation of the excess energy dissipation of highly excited photoinjected electrons in both wurtzite and zincblende GaN is presented. The calculations are performed by solving numerically coupled quantum transport equations for the carriers and the acoustic, transversal and longitudinal optical phonon in order to derive the evolution of their nonequilibrium temperatures, dubbed quasi-temperatures. It is shown that the electron energy dissipation is always faster in the wurtzite structure than in zincblende, both occurring in a subpicosecond time scale (< 0.2 ps).