Anisotropic Hole Drift Velocity in 4H-SiC

TL;DR

This paper presents a theoretical analysis of hole transport in 4H-SiC under high electric fields, revealing how drift velocity and temperature depend on field strength using nonlinear quantum kinetic theory.

Contribution

It introduces a nonlinear quantum kinetic model to describe hole drift and temperature in 4H-SiC, providing insights into high-field transport phenomena.

Findings

Hole drift velocity increases with electric field strength.

Nonequilibrium temperature of holes rises under high electric fields.

The model clarifies dissipative processes in nonlinear hole transport.

Abstract

A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system. The hole drift velocity and the nonequilibrium temperature are obtained, and their dependence on the electric field strength is derived and analyzed.