Electron transport in GaN(ZB) and AlN(WZ)

TL;DR

This paper presents a theoretical study of electron transport in n-doped zinc blende GaN and wurtzite AlN using the Non Equilibrium Statistical Operator Method, analyzing ultrafast electron drift velocity evolution.

Contribution

It introduces a novel application of the Non Equilibrium Statistical Operator Method to model dissipative electron transport in GaN and AlN.

Findings

Ultrafast electron drift velocity dynamics characterized.

Effect of electron effective mass on transport behavior analyzed.

Steady-state and transient transport phenomena described.

Abstract

Seeking a better understanding of the electron transport in n-doped zinc blende GaN and wurtzite AlN, it was performed here a theoretical study resorting to Non Equilibrium Statistical Operator Method, which provides a set of coupled nonlinear differential evolution equations that provides a description of the dissipative phenomena developed in the system. The ultrafast time evolution (and the steady-state) of the electron drift velocity is obtained assuming different values for the electron effective mass.