Investigation of photon emitters in Ce-implanted hexagonal boron nitride

TL;DR

This study explores cerium-implanted hexagonal boron nitride to identify and model bright, stable quantum emitters, revealing potential for defect engineering in 2D materials for quantum technologies.

Contribution

It introduces a new class of Ce-based point defects in hBN and models their emission properties, advancing understanding of atomic structures in quantum emitters.

Findings

Bright room-temperature emission from Ce-implanted hBN

Identification of CeVB center as a candidate defect model

Potential for defect engineering using rare-earth ions in 2D materials

Abstract

Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts.