Hot-Carrier Relaxation in Photoinjected ZnSe

TL;DR

This paper presents a theoretical study of how excess energy from photoinjected carriers in ZnSe dissipates, showing that energy relaxation occurs within a picosecond through coupled quantum transport equations.

Contribution

It introduces a numerical approach to model nonequilibrium carrier and phonon temperatures in ZnSe, providing detailed insights into ultrafast energy relaxation processes.

Findings

Carrier energy dissipation occurs in a picosecond timescale.

Coupled quantum transport equations effectively describe nonequilibrium dynamics.

The study advances understanding of ultrafast carrier relaxation in semiconductor materials.

Abstract

A theoretical investigation of the excess energy dissipation of highly excited photoinjected carriers in zinc selenide (ZnSe) is presented. The calculations are performed by solving numerically coupled quantum transport equations for the carriers and the optical phonons in order to derive the evolution of their nonequilibrium temperatures, dubbed quasitemperatures (or nonequilibrium temperatures). It is shown that the carrier energy dissipation occurs in a picosecond time scale.