Anisotropic Carrier Transport in n-Doped 6H-SiC

TL;DR

This paper investigates charge transport in n-doped 6H-SiC using nonequilibrium quantum kinetic theory, analyzing how electric fields influence electron drift velocity and temperature in different orientations.

Contribution

It introduces a nonequilibrium statistical approach to model anisotropic carrier transport in 6H-SiC, providing theoretical insights into electric field effects.

Findings

Dependence of electron drift velocity on electric field orientation

Analysis of nonequilibrium temperature evolution

Identification of peak points in macrovariable dynamics

Abstract

In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the c-axis) of the basic macrovariables: the electron drift velocity and the nonequilibrium temperature. The peak points in time evolution of this macrovariables are derived and analyzed.