Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee,, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang
TL;DR
This paper introduces a novel ion transport mechanism through atomically-thin 2D materials, enabling the development of analog nonvolatile memory devices suitable for neuromorphic computing applications.
Contribution
It presents the first demonstration of ion sieving through 2D materials for ECRAM devices, addressing key limitations in existing neuromorphic memory technologies.
Findings
Ion transport through 2D atomic sieves demonstrated
Enables high-performance analog nonvolatile memory
Potential for improved neuromorphic computing hardware
Abstract
The first report on ion transport through atomic sieves of atomically-thin 2D material is provided to solve critical limitations of electrochemical random-access memory (ECRAM) devices.
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