Multi-band $s_{++}$ superconductivity in $\textrm{V}_{3}\textrm{Si}$ determined from the response to a controlled disorder
Kyuil Cho, M. Ko\'nczykowski, S. Ghimire, M. A. Tanatar, Lin-Lin Wang,, V. G. Kogan, R. Prozorov

TL;DR
This study investigates the multi-band $s_{++}$ superconductivity in V$_{3}$Si by measuring the London penetration depth and the effect of controlled disorder, providing evidence for two-gap $s_{++}$ pairing with weak inter-band coupling.
Contribution
The paper demonstrates that V$_{3}$Si exhibits two-gap $s_{++}$ superconductivity supported by experimental measurements and theoretical modeling, distinguishing it from $s_{ ext{pm}}$ pairing states.
Findings
Superfluid density indicates two nearly decoupled superconducting gaps.
Controlled disorder suppresses $T_c$ but not enough for $s_{pm}$ pairing.
Band structure supports two effective gaps similar to iron pnictides.
Abstract
The London penetration depth, , was measured in a single crystal VSi. The superfluid density obtained from this measurement shows a distinct signature of two almost decoupled superconducting gaps. This alone is insufficient to distinguish between and pairing states, but it can be achieved by studying the effect of a controlled non-magnetic disorder on the superconducting transition temperature, . For this purpose, the same crystal was sequentially irradiated by 2.5 MeV electrons three times, repeating the measurement between the irradiation runs. A total dose of 10 C/cm ( electrons/) was accumulated, for which has changed from 16.4 K in a pristine state to 14.7 K (9.3 ). This substantial suppression is impossible for a single isotropic gap, but also it is not large…
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Taxonomy
TopicsIron-based superconductors research · scientometrics and bibliometrics research
