Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

TL;DR

This paper reports the first monolithic integration of room-temperature, continuous-wave visible red lasers on silicon using InGaP quantum wells and InP quantum dots, expanding silicon photonics applications into the visible spectrum.

Contribution

It demonstrates the first monolithic, room-temperature, continuous-wave visible lasers on silicon using InGaP QW and InP QD active regions, filling a critical wavelength gap.

Findings

Achieved 680-730 nm emission with low threshold currents.

Demonstrated room-temperature continuous-wave operation.

Paved the way for integrated visible photonics on silicon.

Abstract

Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans from 400 nm to 11 {\mu}m with a crucial gap in the red-wavelength regime of 630-750 nm. Here, we demonstrate the first red InGaP QW and far-red InP QD lasers monolithically grown on CMOS compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A/cm2 and 690 A/cm2 with emission at 680-730 nm was achieved for QW and QD lasers on Si, respectively. This work takes the first vital step towards integration of visible red lasers on Si allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays.