B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature

TL;DR

This paper reports the first successful growth of B20-MnSi films on Si(100) substrates using flash-lamp annealing, demonstrating magnetic skyrmion signatures and enhanced Curie temperature, advancing Si-based skyrmionic device fabrication.

Contribution

First demonstration of B20-MnSi films on Si(100) substrates with skyrmion signatures via a rapid solid-state reaction process.

Findings

B20-MnSi films grown on Si(100) with skyrmion signatures.

Enhanced Curie temperature of 43 K in the films.

Rapid fabrication method using flash-lamp annealing.

Abstract

Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20-MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20-MnSi. The magnetic skyrmion signature is proved in our films by magnetic and transport measurements. The millisecond-range flash annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices.