Dynamical Spin-Orbit-Based Spin Transistor
F. N. G\"ursoy, P. Reck, C. Gorini, K. Richter, I. Adagideli

TL;DR
This paper introduces a spin transistor leveraging dynamical and inhomogeneous Rashba spin-orbit interaction to generate, manipulate, and detect pure spin currents and convert them into charge signals, expanding the capabilities of spintronic devices.
Contribution
It presents a novel spin transistor design that combines dynamical SOI with gauge theory and Onsager relations for efficient spin current control and detection, beyond traditional adiabatic methods.
Findings
Pure spin currents of several hundred nano-Amperes generated.
Analytical expressions for spin and charge conductance derived.
Predictions validated by numerical simulations across various frequencies.
Abstract
Spin-orbit interaction (SOI) has been a key tool to steer and manipulate spin-dependent transport properties in two-dimensional electron gases. Here we demonstrate how spin currents can be created and efficiently read out in nano- or mesoscale conductors with time-dependent and spatially inhomogeneous Rashba SOI. Invoking an underlying non-Abelian SU(2) gauge structure we show how time-periodic spin-orbit fields give rise to spin electric forces and enable the generation of pure spin currents of the order of several hundred nano-Amperes. In a complementary way, by combining gauge transformations with "hidden" Onsager relations, we exploit spatially inhomogeneous Rashba SOI to convert spin currents (back) into charge currents. In combining both concepts, we devise a spin transistor that integrates efficient spin current generation, by employing dynamical SOI, with its experimentally…
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