Ferromagnetic Double Perovskite Semiconductors with Tunable Properties

TL;DR

This paper reports the successful doping of a double perovskite semiconductor to induce ferromagnetism and tune its band gap, advancing materials for oxide-based spintronics.

Contribution

It introduces a new ferromagnetic semiconducting double perovskite with tunable magnetic and electronic properties through Mn doping.

Findings

Ferromagnetism induced in Sr2GaSbO6 by Mn doping.

Tunable band gap and magnetic ordering temperature.

Crystallizes in tetragonal symmetry with space group I4/m.

Abstract

We successfully dope the magnetically silent double perovskite semiconductor Sr2GaSbO6 to induce ferromagnetism and tune its band gap, with Ga3+ partially substituted by the magnetic trivalent cation Mn3+, in a rigid cation ordering with Sb5+. Our new ferromagnetic semiconducting Sr2Ga1-xMnxSbO6 double perovskite, which crystallizes in tetragonal symmetry (space group I4/m) and has tunable ferromagnetic ordering temperature and band gap, suggests that magnetic ion doping of double perovskites is a productive avenue towards obtaining materials for application in next-generation oxide-based spintronic devices.