GaAs-Based Near-Field Thermophotonic Devices: Approaching The Idealized Case With One-Dimensional PN Junctions

TL;DR

This paper presents a detailed numerical analysis of GaAs-based near-field thermophotonic devices, demonstrating their potential to efficiently harvest waste heat near ambient temperatures by approaching ideal performance with simplified 1D PN junction models.

Contribution

It introduces a coupled radiative heat transfer and drift-diffusion simulation framework for NF-TPX devices, showing how performance can approach idealized cases with optimized parameters.

Findings

Achieved a power density of 1 W/cm² at 300 K temperature difference.

Demonstrated the potential for near-ambient waste heat harvesting.

Validated that simplified models can approach ideal device performance.

Abstract

Thermophotonics (TPX) is a technology close to thermophotovoltaics (TPV), where a heated light-emitting diode (LED) is used as the active thermal emitter of the system. It allows to tune the heat flux, by means of electroluminescence, to a spectral range matching better the gap of a photovoltaic cell. The concept is extended to near-field thermophotonics (NF-TPX), where enhanced energy conversion is due to both electric control and wave tunneling. We perform a thorough numerical analysis of a GaAs-based NF-TPX device, by coupling a near-field radiative heat transfer solver based on fluctuational electrodynamics with an algorithm based on a simplified version of the drift-diffusion equations in 1D. This allows for the investigation of the emission and absorption profiles in the LED and the photovoltaic (PV) cell, and for the scrutiny of the impact of key parameters. We also demonstrate that the performance obtained with this algorithm can approach idealized cases for improved devices. For the considered simplified architecture and 300 K temperature difference, we find a power density output of 1 W.cm--2 , underlining the potential for waste heat harvesting close to ambient temperature.