Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature
Yi Zhu, Vidur Raj, Ziyuan Li, Hark Hoe Tan, Chennupati Jagadish, and, Lan Fu

TL;DR
This paper presents a room-temperature, self-powered InP nanowire photodetector capable of single-photon detection without external bias, combining broadband sensitivity, low dark current, and high-speed operation for advanced optical technologies.
Contribution
The authors demonstrate a novel self-powered InP nanowire photodetector achieving single-photon detection at room temperature without external bias, using a radial p-n junction with high electric field.
Findings
Detects single photons at room temperature without external bias
Achieves broadband sensitivity and high-speed operation above 600 MHz
Exhibits extremely low dark current and high charge separation efficiency
Abstract
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V,…
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Taxonomy
TopicsNanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
