Half-Metallicity in Smallest Cage-like Cluster of CdTe with Doping of Transition Metal Atoms
Kashinath Tukaram Chavan, Sharat Chandra, Anjali Kshirsagar

TL;DR
This study uses first-principles calculations to explore how doping a CdTe cage-like cluster with transition metals induces half-metallicity, revealing potential for spintronics applications.
Contribution
It is the first to demonstrate transition metal doping induces half-metallicity in a small CdTe cage-like cluster, with detailed electronic structure analysis.
Findings
Passivation widens energy gap and stabilizes the cluster.
Doping induces polarization and half-metallic behavior.
Different dopants cause electron or hole doping, suitable for spintronics.
Abstract
We report first principles theory based electronic structure studies of a semiconducting stoichiometric cage-like Cd9Te9 cluster. Substantial changes are observed in the electronic structure of the cluster on passivation with fictitious hydrogen atoms, in particular, widening of the energy gap between highest occupied molecular orbital and lowest unoccupied molecular orbital and enhancement in stability of cluster is seen. The cluster, when substitutionally mono-doped for a Cd by a set of 3d and 4d transition metal atoms (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh and Pd), is found to acquire polarization as seen from spin resolved density of states near Fermi level. Further, such mono-doping in passivated cluster shows half-metallic behavior. Mapping of partial density of states of each system on that of undoped cluster reveals additional levels caused by doping each TM atom separately.…
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