High thermoelectric and optical conductivity driven by the interaction of Boron and Nitrogen dopant atoms with a 2D monolayer Beryllium Oxide
Nzar Rauf Abdullah, Botan Jawdat Abdullah, Vidar Gudmundsson

TL;DR
This study uses density functional theory to show that co-doping monolayer BeO with Boron and Nitrogen enhances its thermoelectric and optical properties, transforming it into a semiconductor with promising device applications.
Contribution
It demonstrates that B and N co-doping induces a semiconductor behavior and improves thermoelectric and optical responses in monolayer BeO, a novel modification not previously explored.
Findings
B and N co-doping reduces the band gap of BeO.
The doped BeO exhibits high optical responses in visible light.
Enhanced thermoelectric properties such as Seebeck coefficient and figure of merit.
Abstract
The electronic, thermal and optical properties of a monolayer BeO with Boron (B) and Nitrogen (N) co-dopant atoms are studied by means of a density functional theory computation. Our calculations reveal that BeO with BN-codopant atoms can give rise to more effective and outstanding performance for the thermal and optical responses. More significantly, the monolayer BeO with BN codopant atoms becomes a semiconductor with a direct band gap in comparison with the insulator behavior of pristine BeO. The particular attention of this work is paid to the influence of the atomic configuration and the interaction of the B and N dopant atoms with BeO. The interaction of the B and N atoms with the BeO monolayer diminishes degenerate energy states forming flat bands. It is also found that there is a strong attractive interaction between the O and N atoms forming a strong sigma bond breaking the…
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