Cation-size mismatch as a predictive descriptor for structural distortion, configurational disorder, and valence-band splitting in II-IV-N$_2$ semiconductors
Malhar Kute, Zihao Deng, Sieun Chae, Emmanouil Kioupakis

TL;DR
This study uses first-principles calculations to show how cation size mismatch influences structural distortions, disorder, and valence band splitting in II-IV-N$_2$ semiconductors, enabling property tuning.
Contribution
It introduces a predictive framework linking cation size mismatch to structural and electronic properties in II-IV-N$_2$ materials using first-principles calculations.
Findings
Larger cation size mismatch causes stronger lattice distortions.
Formation energy of antisite pairs predicts disorder propensity.
Structural distortions lead to valence band splitting.
Abstract
The II-IV-N class of heterovalent ternary nitrides have gained significant interest as alternatives to the III-nitrides for electronic and optoelectronic applications. In this study, we apply first-principles calculations based on density functional theory to systematically investigate the effects of structural distortions due to cation size mismatch on the configurational disorder of the cation sublattice and the valence band structure in this class of materials. We find that larger size mismatch between the group-II and the group-IV cations results in stronger lattice distortions from the ideal hexagonal ratio, which in turn inhibits the propensity of these materials towards octet-rule violating cation disorder. We also demonstrate that the formation energy of a single cation antisite pair, which is fast and simple to calculate, is a strong indicator of a material's propensity…
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