Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison

TL;DR

This study compares electron mobility in bulk n-doped SiC polytypes 3C, 4H, and 6H using a quantum kinetic theory, finding 4H-SiC most suitable for high-mobility applications.

Contribution

It provides a theoretical comparison of charge transport in different SiC polytypes using non-equilibrium quantum kinetic modeling.

Findings

4H-SiC exhibits the highest mobility under certain electric field orientations.

Mobility depends on electric field intensity and orientation.

4H-SiC is most attractive for high-mobility electronic applications.

Abstract

This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evolution of the basic macrovariables: the electron drift velocity and the non-equilibrium temperature are obtained theoretically by using a Non-Equilibrium Quantum Kinetic Theory, derived from the method of Nonequilibrium Statistical Operator (NSO). The dependence on the intensity and orientation of the applied electric field of this macrovariables and mobility are derived and analyzed. From the results obtained in this paper, the most attractive of these semiconductors for applications requiring greater electronic mobility is the polytype 4H-SiC with the electric field applied perpendicular to the c-axis.