Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies

TL;DR

This paper presents a quantum-dot single-electron transistor that functions as a highly sensitive, low-noise terahertz radiation detector leveraging photothermoelectric effects in a nanowire structure.

Contribution

The study introduces a novel quantum-dot based nanodetector operating at 0.6 THz with high sensitivity and low noise, advancing quantum sensing technology in the terahertz domain.

Findings

Detects 0.6 THz radiation with <8 pWHz-1/2 noise equivalent power

Exhibits almost zero dark current

Enables potential applications in quantum communications

Abstract

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies.