High and anomalous thermal conductivity in monolayer MSi$_2$Z$_4$ semiconductors
Yan Yin, Min Yi, and Wanlin Guo

TL;DR
This study uses ab initio calculations to analyze the thermal conductivity of 2D MSi$_2$Z$_4$ semiconductors, revealing anomalous behaviors and identifying vibrational properties responsible for high and unusual thermal conductivities.
Contribution
It uncovers the microscopic vibrational mechanisms behind the anomalous thermal conductivity in 2D MSi$_2$Z$_4$ semiconductors, challenging conventional rules and guiding thermal management applications.
Findings
MoSi$_2$N$_4$ and WSi$_2$N$_4$ have high thermal conductivity over 400 W/mK.
MSi$_2$N$_4$ with heavy transition metals can have 3-4 times higher conductivity than with lighter metals.
Anomalous thermal conductivity is linked to vibrational properties like acoustic branch bunching and flatness.
Abstract
The lattice thermal conductivity () of newly synthesized two-dimensional (2D) MoSiN family and its associated abnormality is anatomized by phonon Boltzmann transport calculations. of MoSiN and WSiN is found over 400 WmK at 300 K. of MoSiZ (Z=N,P,As) obeys Slack's rule of thumb, decreasing by one order of magnitude from Z=N to Z=As with 46 WmK. However, in MSiN (M=Mo,Cr,W,Ti,Zr,Hf), the variation of with respect to M is anomalous, i.e. deviating from Slack's classic rule. For M in the same group, of MSiN is insensitive to the average atomic mass, Debye temperature, phonon group velocity, and bond strength owing to the similar phonon structure and scattering rates. MSiN with heavy group-VIB M even possesses a three to four times higher than…
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Taxonomy
TopicsThermal properties of materials · Advanced Thermoelectric Materials and Devices · Graphene research and applications
