Strain-dependent resistance and giant gauge factor in monolayer WSe2

TL;DR

This paper demonstrates that applying uniaxial strain to monolayer WSe2 significantly alters its resistance and can produce a giant gauge factor of up to 2400, due to changes in Berry curvature dipole affecting electronic transport.

Contribution

It reveals the strain-dependent resistance behavior and giant gauge factor in monolayer WSe2 linked to Berry curvature dipole effects, advancing strain engineering in 2D materials.

Findings

Resistance strongly depends on uniaxial strain.

Giant gauge factor of up to 2400 observed.

Berry curvature dipole influences transport properties.

Abstract

We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe2 potential for the application in the high-performance flexible and transparent electronics.