Uniform Graphene on Cu and Au Substrates

TL;DR

This paper presents a method for synthesizing single and bilayer graphene on Cu and Au substrates using low pressure chemical vapor deposition, with characterization and transfer techniques demonstrated.

Contribution

It introduces a synthesis process for high-quality graphene on Cu and Au, including transferability and growth mechanisms on Au.

Findings

Graphene can be grown on Cu and Au substrates via CVD.

Large-area graphene on Cu can be transferred to SiO2.

Growth on Au involves adsorption and diffusion-precipitation mechanisms.

Abstract

We report the synthesis of single and bi layer graphene films by low pressure chemical vapor deposition technique on Cu and Au substrates. The as grown films were characterized by transmission electron microscopy, scanning electron microscopy and Raman spectroscopy techniques. The large lateral area graphene deposited on Cu can easily be transferred on Si SiO2. In the case of Au substrate both the adsorption and diffusion-precipitation leads to the growth of graphene.