GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

TL;DR

This paper reviews the growth and optical properties of GaAs quantum dots created by droplet etching, highlighting their potential as high-quality quantum light sources for quantum communication applications.

Contribution

It provides an overview of recent advances in the epitaxial growth and optical characterization of GaAs quantum dots made by droplet etching, emphasizing their use in quantum communication.

Findings

Successful generation of single photons

Generation of polarization entangled photon pairs

Application in quantum entanglement and key distribution

Abstract

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swapping and quantum key distribution.